METHOD FOR MANUFACTURING CARBON NANOTUBE-BASED GAS SENSOR

摘要

PURPOSE: A method for fabricating a carbon nanotube-based gas sensor is provided to achieve a gas sensor with a carbon nanotube having superior physical and chemical characteristics. CONSTITUTION: Silicon nitride layers are deposited on the top and bottom surfaces of a silicon wafer(10) through a CVD(Chemical Vapor Deposition) process. A tantalum/platinum layer(25) is deposited on the top surface of the silicon wafer(10) through a sputtering process. Then, the tantalum/platinum layer(25) is etched through a photolithography process using a first mask pattern to form an electrode and a heater. A silicon oxide layer(30) is deposited on the top surface of the silicon wafer(10) by using PECVD(Plasma Enhanced Chemical Vapor Deposition) process. Then, the silicon oxide layer(30) is patterned by using a photolithography process with a second mask pattern. A carbon nanotube is locally grown on the top surface of the silicon wafer(10) by using a shadow mask. Then, a silicon nitride layer(20) is locally etched. After that, a single-crystal silicon wafer is only anisotropically etched using TMAH solution.