METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to reduce proximity effect of mask processing and to improve erasing speed of cells by forming the layout of a source pick-up region which is same as a cell region. CONSTITUTION: An isolation layer(120) is formed on a semiconductor substrate(110). A gate electrode is formed by forming a tunnel oxide layer, a floating gate, a dielectric film and a control gate(140) on the substrate. After forming a spacer at both sidewalls of the gate electrode, a source line(156) and the first metal contact are formed. A nitride layer and an interlayer dielectric are formed on the resultant structure. A source pick-up contact(162) is formed on the source line and the second metal contact(160) is formed on the first metal contact. A common source line(180) and a bit line(170) are connected to the source pick-up contact and the second metal contact, respectively. Each layout for forming the gate electrode is then patterned to have constant width without curvature due to the source pick-up contact(162).