SEMICONDUCTOR DEVICE HAVING METAL-INSULATOR-METAL TYPE CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a metal-insulator-metal type capacitor and a method for manufacturing the same.

SOLUTION: The semiconductor device is provided with: a lower wiring formed on a semiconductor substrate; an intermetallic insulating film formed on the semiconductor substrate having the lower wiring; a plurality of openings formed through the intermetallic insulating film for exposure of the lower wiring; a lower electrode, which is formed in a conformal pattern, on the inner side walls of the openings, the surface portions of the exposed lower wiring and the intermetallic insulating film portions between the openings; a dielectric film and an upper electrode stacked in this order on the lower electrode; and an upper wiring arranged on the upper electrode.

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