| 摘要 |
PROBLEM TO BE SOLVED: To provide a current perpendicular to plane-magnetoresistive effect element in which a large amount of varying resistance is allowed by implementing a fundamental review of material attribute of a pin layer, free layer and a spacer layer of a spin valve structure, and to provide a magnetic head and a magnetic reproducing device using such a magnetoresistive effect element as above. SOLUTION: By combining a magnetic material having negative spin- dependent bulk scattering parameterβand the spacer layer in which negative spin-dependent interface scattering parameterγis acquired, large rate of magnetoresistance variation is acquired while utilizing negative magnetoresistive effect, in the magnetoresistive effect element. COPYRIGHT: (C)2004,JPO
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