| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a high-performance (high-speed and low-power consumption) field effect semiconductor device can be manufactured by uniformly and stably reducing the thicknesses of semiconductor layers, such as SOI layers, etc., and the yield of the device can be improved by stably reducing the resistances of source and drain electrodes, and to provide the field effect semiconductor device manufactured by the method. SOLUTION: In the field effect semiconductor device, channel regions 3a and 3b are formed by forming at least SOI layers 53a and 53b underlying a gate electrode 59 in recessed shapes between a source region 5 and a drain region 6. At the time of forming the channel regions 3a and 3b, in addition, the thicknesses of the SOI layers 53 are premeasured by the reflectance spectroscopic method and the SOI layers 53 are left with a prescribed thicknesses by etching the layers 53 in the recessed forms by the PACE method based on the measurement data. COPYRIGHT: (C)2004,JPO
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