| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory, in the memory cell structure to have the limited operation voltage region, which has been manufactured to show small difference in the processes and the characteristics which do not change as much as possible, in voltages other than the operating voltage. SOLUTION: The ferroelectric memory is manufactured using a mixture of bismuth strontiumate-tantalate and bismuth strontiumate-niobate as a ferroelectric. The composition ratio of materials is determined from the given operating voltage and film thickness condition, considering coercive electric field as the material depending on difference of composition ratio. Accordingly, it is possible to follow the specifications of the operation voltage and film thickness within a certain range. COPYRIGHT: (C)2004,JPO
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