发明名称 |
TREATMENT LIQUID OF SEMICONDUCTOR SUBSTRATE AND TREATMENT METHOD EMPLOYING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide treatment liquid of a semiconductor substrate in which impurities, e.g. metals, particles and organic matters, can be removed while controlling the corrosion of a metal or a metal compound, and a treatment method employing it. SOLUTION: The liquid for treating a semiconductor substrate contains quarternary pyridinium salt or quarternary ammonium salt. COPYRIGHT: (C)2004,JPO
|
申请公布号 |
JP2003297791(A) |
申请公布日期 |
2003.10.17 |
申请号 |
JP20020103073 |
申请日期 |
2002.04.04 |
申请人 |
MITSUBISHI GAS CHEM CO INC |
发明人 |
WATANABE HIROYA;MIYAUCHI TAKESHI |
分类号 |
C11D7/08;C09K13/04;C11D7/18;C11D7/26;C11D7/32;C11D17/08;H01L21/304;H01L21/308;(IPC1-7):H01L21/304 |
主分类号 |
C11D7/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|