| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine pattern forming method for forming a fine pattern by using a resist having superior resistance in etching. SOLUTION: In this method, a semiconductor substrate containing a conductive film is coated with both a resist film for i line and an ArF resist film successively; a mask having a specific pattern is applied for carrying out exposure and first baking, and generates an OH group or a COOH group in the ArF resist; the mask is removed; a first resist pattern is formed by a first development; exposure and second baking are carried out; a silicon oxide film is formed on the surface of the first resist pattern for silylating by utilizing HMDS; the second resist pattern is formed by allowing the resist film for i line to be subjected to dry process development with the first resist pattern including the silicon oxide film as the mask; and the conductive film is etched with the first and second resist patterns containing the silicon oxide film as the mask. COPYRIGHT: (C)2004,JPO |
