| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can improve data holding characteristic and its manufacturing method. SOLUTION: The device has a nitrogen added silicon oxide film; an Al added silicon oxide film; an Al oxide; a Ti added silicon oxide film; a silicon oxide film whereto two kinds among three kinds of nitrogen, Al and Ti are added; Ti oxide; oxide of Ti and Al; a single metallic layer consisting of any one of a metallic group of Ti, Ni, Co, Zr, Cu, Pt, V, Mg, U, Nd, La, Sc; a layer consisting of a binary or more alloy wherein two or more metals of the metallic group are incorporated at least 50% of an entire; and a layer (such as an Al<SB>2</SB>O<SB>3</SB>film 10) comprising at least one or more of a group consisting of a layer formed of nitride of the alloy or a layer formed of hydride of the alloy, on an upper layer of a memory element. COPYRIGHT: (C)2004,JPO
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