| 摘要 |
PURPOSE: A method for manufacturing a floating gate of a nonvolatile memory cell is provided to be capable of simplifying manufacturing processes by using a hard mask having the first and second spacer. CONSTITUTION: A tunnel oxide layer, a conductive layer, a buffer oxide, a hard mask are sequentially deposited on a semiconductor substrate(S301). The first mask pattern for defining the first and second plane of a floating gate is formed on the hard mask(S302). The hard mask is patterned by using the first mask pattern(S303). After removing the first mask pattern, a barrier layer and the second mask pattern for defining the third and fourth plane of the floating gate are formed on the resultant structure(S304). The barrier layer and the hard mask are patterned using the second mask pattern(S305). After removing the second mask pattern and the barrier layer, the first and second spacer are formed at both sidewalls of the hard mask pattern(S306,S307). The buffer oxide and the conductive layer are patterned using the hard mask pattern having the first and second spacer(S308).
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