发明名称 |
METHOD FOR FORMING SUBSTRATE FOR MANUFACTURING SIGE/SI HETERO-JUNCTION FIELD EFFECT TRANSISTOR AND SUBSTRATE THEREOF |
摘要 |
PURPOSE: A method for forming a substrate for manufacturing an SiGe/Si HFET(Hetero-junction Field Effect Transistor) and the substrate thereof are provided to be capable of obtaining a thin buffer layer having good device characteristics by carrying out an in-situ heat treatment. CONSTITUTION: After forming the first silicon germanium layer(12) having an inhomogeneous germanium constitution on a silicon epitaxial layer(10), a heat treatment is carried out at the resultant structure by in-situ. Then, the second silicon germanium layer(14) having a homogeneous germanium, is formed on the resultant structure. A silicon cap layer(16) is formed on the second silicon germanium layer. At the time, the first and second silicon germanium layer are used as a buffer layer.
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申请公布号 |
KR20030080312(A) |
申请公布日期 |
2003.10.17 |
申请号 |
KR20020018878 |
申请日期 |
2002.04.08 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LIM, JEONG UK;SONG, YEONG JU;SIM, GYU HWAN;KANG, JIN YEONG |
分类号 |
H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L29/737 |
代理机构 |
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地址 |
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