| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress a change in high frequency characteristic. <P>SOLUTION: The semiconductor device has a high frequency circuit region 107 and a low frequency circuit region 501. The high frequency circuit region 107 is arranged at the central region of a semiconductor substrate 101, and the low frequency circuit region 501 is arranged at the peripheral region of the semiconductor substrate 101. A high frequency circuit is mainly arranged on the semiconductor substrate 101 of the high frequency circuit region 107, and a low frequency circuit is mainly arranged on the semiconductor substrate 101 of the low frequency circuit region 501. An external electrode 201 related with the high frequency circuit formed on the high frequency circuit region 107 is arranged on the low frequency circuit region by a Fun-Out structure by rewiring 105b. Since the external electrode 201 is not arranged right over (over) the high frequency circuit, the changes in frequency characteristics can be suppressed. <P>COPYRIGHT: (C)2004,JPO |
