SEMICONDUCTOR DEVICE AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique for reducing an optical leakage current in order to perform superior display.

SOLUTION: Microcrystals of polysilicon or the like containing a large number of carrier traps are distributed in a silicon film 102 which can obtain high- field effect mobility such as a continuous grain boundary crystal. Discontinuous crystal grain boundaries and in-grain defects of the microcrystal are made to function as trap sites for optical pumping charges, thereby providing a technique for obtaining a TFT in which high carrier mobility and a low optical leakage current are made compatible with each other. Since the TFT itself can reduce optical sensitivity (optical leakage current), a simpler light-shielding structure can be adopted, and manufacturing cost reduction is also enabled.

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