| 摘要 |
PROBLEM TO BE SOLVED: To increase the yield of a semiconductor device by enhancing a dust removing rate in the cleaning process of a semiconductor wafer. SOLUTION: A TEOS film 14 having such a thickness as the interval of second layer wiring M2 is not buried completely is formed on the second layer wiring M2, and while jetting pure water from a nozzle 101 toward the surface of the TEOS film 14 at a hydraulic pressure of 5 MPa or above (jet cleaning), a brush 103 made of polyvinylalcohol (PVA) is rotated and moved while being pressed lightly against the surface of a semiconductor wafer thus cleaning the wafer surface (brush cleaning). A dust removing rate can thereby be enhanced on the surface of the TEOS film 14 having protrusions and recesses corresponding to those of the second layer wiring M2. COPYRIGHT: (C)2004,JPO
|
