| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming ferroelectric thin film, which reduces thermal load in crystallization of a ferroelectric, a ferroelectric memory, and to provide a method of manufacturing a ferroelectric memory, and a semiconductor device, and to provide a method of manufacturing semiconductor device. SOLUTION: The method of forming the ferroelectric material thin film comprises a process of forming a fine crystal core 50 of an oxide by irradiating an amorphous oxide thin film 30 formed on a substrate 10 with pulse laser beam or lamp beam, a process of forming a light transparent/absorbing film 22 on the oxide thin film including the fine crystal core 40, and a process of forming a ferroelectric 50 through crystallization of the oxide by irradiating, from the upper side, the light transparent/absorbing film 22 with the pulse laser beam or a lamp beam. COPYRIGHT: (C)2004,JPO
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