发明名称 SENSE AMPLIFIER CIRCUIT AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sense amplifier of which operation speed is increased. SOLUTION: A sense amplifier used for a memory device is provided. The sense amplifier has a pair of cross-coupled inverters, and each inverter has at least two transistors. Further, the sense amplifier can have a first capacitor coupled to a first input/output terminal and a second capacitor coupled to a second input/output terminal. Variation in voltage difference appearing by crossing the input/output terminal boostraps the cross-coupled inverters, and facilitates activation and non-activation of a transistor in the cross coupled inverters. Therefore, a response time of the sense amplifier is decreased. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003297086(A) 申请公布日期 2003.10.17
申请号 JP20030090861 申请日期 2003.03.28
申请人 STMICROELECTRONICS INC 发明人 WORLEY JAMES L
分类号 G11C11/419;G11C7/06;G11C11/409;(IPC1-7):G11C11/419 主分类号 G11C11/419
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