| 发明名称 |
METHOD FOR CLEANING FILM-FORMING DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method for removing unwanted materials accumulated in a reaction chamber and on a jig or the like in a film-forming device in a semiconductor field by suppressing the by-production of CF<SB>4</SB>while obtaining a high cleaning speed. SOLUTION: Plasma cleaning is conducted with mixed gas obtained by adding O<SB>2</SB>to CF<SB>3</SB>OF by 20 to 80 vol.%. COPYRIGHT: (C)2004,JPO
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| 申请公布号 |
JP2003297757(A) |
申请公布日期 |
2003.10.17 |
| 申请号 |
JP20020094326 |
申请日期 |
2002.03.29 |
| 申请人 |
CENTRAL GLASS CO LTD;RESEARCH INSTITUTE OF INNOVATIVE TECHNOLOGY FOR THE EARTH;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
TANAKA KENJI;MORI ISAMU;MITSUI YUUKI;OHIRA YUTAKA;YONEMURA TAISUKE;SEKIYA AKIRA |
| 分类号 |
C23C16/44;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/44 |
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