| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device of FeRAM in which area of a memory cell is reduced and a dummy cell and reference voltage are not required in read data. SOLUTION: This semiconductor memory device is provided with a memory cell block constituted by connecting in series a plurality of memory cells including a transistor 1 and a ferroelectric capacitor 3 connected between a source and a drain of a transistor, word lines WL0, WL1,... connected respectively to gates of a plurality of transistors included in the memory cell block, bit lines BL0 connected to one end of the memory cell block, bit lines /BL0 connected to the other end of the memory cell block, capacitors 12, 22 for read accumulating electric charges in accordance with a state of the ferroelectric capacitor of the memory cell connected to a selected word line. COPYRIGHT: (C)2004,JPO
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