| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element for high frequency band using a material that propagates waves at a high speed with little losses in its piezoelectric thin film. <P>SOLUTION: The piezoelectric thin film element having the piezoelectric thin film of about 1 μm or less in thickness includes a substrate having front and rear surfaces, a supporting film provided on the front surface of the substrate and composed of a silicon oxide, etc., and a lower electrode provided on the supporting film and containing iridium, etc., as the main component. The thin film element also includes the piezoelectric thin film provided on the lower electrode and containing a material expressed by the chemical formula: ABOX as the main component, an upper electrode provided on the piezoelectric thin film and containing aluminum, etc., as the main component, and a recessed section formed by removing part of the substrate from the rear surface side until the rear surface of the supporting film below the piezoelectric thin film is exposed. <P>COPYRIGHT: (C)2004,JPO |
