| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing and a method for modifying the composition for polishing and a polishing method using the composition for polishing to polish the surface or edge face of a silicon wafer or semiconductor device substrate or the like, or the surface or edge face of a silicon wafer or semiconductor substrate whose surface is coated with an oxide film/nitride film or the like. <P>SOLUTION: This composition for polishing is configured so that demarcation oxide silicon particles whose particle diameters range from 50 to 120 nm and demarcated oxide silicon particles whose particle diameters range from 30 to 50 nm, and demarcated oxide silicon particles whose particle diameters range from 15 to 30 nm can exist at the weight rate of 1:0.2 to 2:0 to 1.5, that the concentration of the oxide silicon particles for the composition as a whole for polishing can be set from 1 to 25 wt.%, and that the logarithmic value of the reciprocal number of an acid dissociation constant at 25°C can be set in the range of 8.0 to 12.0, and that salt made of the combination of a weak acid and/or weak acid using a weak base with a strong base, a strong acid with a weak base, or a weak acid with a weak base can be contained. Therefore, a composition can be provided for polishing modified as a buffer solution having buffering action in the range of pH 8.7 to 10.6 and a polishing method using the composition for polishing. <P>COPYRIGHT: (C)2004,JPO</p> |
