| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-speed semiconductor integrated circuit which reduces power consumption. <P>SOLUTION: The semiconductor integrated circuit has a first circuit block having first wiring and a plurality of MOS transistors connected with source/ drain lines to the first wiring and supplied with an operating potential from the first wiring and a second circuit block having second wiring and a plurality of MOS transistors connected with source/drain lines to the second wiring and supplied with an operating potential from the second wiring, the first wiring is connected to third wiring via the source/drain line of the first MOSFET, and the second wiring is connected to the third wiring via the source/drain line of the second MOSFET. Then, the third wiring is located top extend in a first direction, the first wiring is located to extend in a second direction across the first direction, and the second wiring is located to extend in the second direction. <P>COPYRIGHT: (C)2004,JPO</p> |
