| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a member for a semiconductor manufacturing device and the manufacturing method of the same, having an excellent resistivility against a halogen base corrosive gas or the plasma of the same and reduced in the absorption of high frequency wave or microwave while generating no cutout or crack upon mounting or handling. <P>SOLUTION: The member for semiconductor manufacturing device is provided with a ceramic substrate consisting of an aluminum oxide sintered body and an anti-corrosive member, consisting of a sintered body, applied on the surface of the ceramic substrate and whose principal constituent is YAG, while the dielectric loss of the ceramic substrate in 10 MHz-5 GHz is less than 4×10<SP>-4</SP>. In this case, the member for the semiconductor manufacturing device is manufactured by a method wherein YAG slurry or Y<SB>2</SB>O<SB>3</SB>slurry is impregnated into either one of an aluminum oxide formed body, dried body, defatted body or calcined body, which is employed as the ceramic substrate, to round out the same and, thereafter, the ceramic substrate is calcined. <P>COPYRIGHT: (C)2004,JPO</p> |
