| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can improve productivity. <P>SOLUTION: A resist film 13 is formed on a silicon oxide film 12 laminated on a glass substrate 10. A stamper 200 is made to abut against the resist film 13 in such a manner that protrusions 202 cut into the resist film 13, and a plurality of fine apertures 53 are formed in the resist film 13. By using the resist film 13 as a mask, reactive ion etching is performed and made to progress as far as the lower side silicon oxide film 12 through the apertures 53. After that, the unwanted resist film 13 is removed, thereby obtaining the glass substrate 10 in which a plurality of holes 52 which serve as starting points when the recrystallization of a semiconductor film is conducted are formed. <P>COPYRIGHT: (C)2004,JPO</p> |
