| 摘要 |
PROBLEM TO BE SOLVED: To control the stress of a thin film formed on a substrate easily and over a wide range. SOLUTION: A modified magnetron type plasma treatment apparatus capable of controlling the energy of ions incident to a substrate independently of, plasma generation is used as an apparatus for forming a thin film. The modified magnetron type plasma treatment apparatus is configured so as to ground a susceptor for placing the substrate via a variable impedance. On forming a thin film on the substrate, the electric potential of the susceptor is set to a predetermined value by adjusting the variable impedance. Hereby, the energy of the ions incident to the substrate is controlled such that the stress of the thin film formed on the substrate acquires a desired value corresponding to the electric potential of the susceptor. COPYRIGHT: (C)2004,JPO
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