| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film growing device suitable for forming various semiconductor devices for selectively growing a semiconductor thin film only on a substrate exposed surface, growing a semiconductor thin film over the whole face including an oxide pattern face, and growing a semiconductor thin film containing impurities at a high concentration. SOLUTION: This device is provided with a vacuum vessel 2 for growth, an exhaust mechanism 3 for exhausting gas in the vacuum vessel 2, a substrate support mechanism 4 installed in the vacuum vessel 2 for supporting a substrate to be grown, a substrate-heating body 6 for heating the opposite main face of the growth face of the substrate to be grown which is supported by the substrate support mechanism 4, a raw material gas inlet part 8 for introducing raw material gas containing group IV elements in the vacuum vessel 2, and a heating body 9 for raw material gas thermal decomposition installed and disposed on the growth face side of the substrate to be grown which is supported by the substrate support mechanism 4 for thermally decomposing a part of the raw material gas, and for feeding the raw material gas in which a thermally decomposed product is diffused and contained to the growth face of the substrate to be grown. COPYRIGHT: (C)2004,JPO
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