| 摘要 |
PROBLEM TO BE SOLVED: To provide a film which is a coating film having an even and appropriate thickness and a superior dielectric constant and mechanical strength, and which has superior storage stability, as an interlayer insulation film in a semiconductor device or the like. SOLUTION: A method of manufacturing a carbosilane-based film for a semiconductor device includes a process of irradiating a high-energy beam such as electron beams, ultraviolet rays, and X-rays on a film containing a carbosilane compound. COPYRIGHT: (C)2004,JPO
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