SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device is characterized in that a waveguide is provided in a multilayer structure including, on a substrate (101) transparent to the laser beam and having an index of refraction ns, a first clad layer (103) having an index of refraction nc1, a second clad layer (104) having an index of refraction nc2, a third clad layer (105) having in index of refraction nc3, a first-conductivity-type guide layer (106) having an index of refraction ng, a quantum well active layer (107), a second-conductivity-type guide layer (109), a second-conductivity-type clad layer (110), and a second-conductivity-type contact layer (111), and that the effective index of refraction of the waveguide is ne, and the relation nc2<(nc1, nc3)<Ne<(ns, ng) is satisfied.