| 发明名称 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
| 摘要 |
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer.
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| 申请公布号 |
US2003192574(A1) |
申请公布日期 |
2003.10.16 |
| 申请号 |
US20030440589 |
申请日期 |
2003.05.19 |
| 申请人 |
YATES DONALD L. |
发明人 |
YATES DONALD L. |
| 分类号 |
B08B3/00;H01L21/00;H01L21/02;H01L21/306;(IPC1-7):B08B3/00 |
主分类号 |
B08B3/00 |
| 代理机构 |
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