发明名称 Method for cleaning a process chamber
摘要 Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
申请公布号 US2003192568(A1) 申请公布日期 2003.10.16
申请号 US20020122481 申请日期 2002.04.12
申请人 APPLIED MATERIALS, INC. 发明人 ZHENG YI;SINGH VINITA;NEMANI SRINIVAS D.;CHEN CHEN-AN;LEE JU-HYUNG;VENKATARAMAN SHANKAR
分类号 B08B7/00;C23C16/44;(IPC1-7):B08B6/00 主分类号 B08B7/00
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