Semiconductor device and method for the fabrication thereof

摘要

Disclosed is a semiconductor device 10 comprising a first semiconductor element 11 with an arrangement of first element electrodes 12, a second semiconductor element 13 with an arrangement of second element electrodes 14, a connection member 15 electrically connecting together a portion 12b of the first element electrodes 12 and the second element electrodes 14, an insulation layer 17 covering a major surface 11a of the first semiconductor element 11 and a backside surface 13b of the second semiconductor element 13, a wiring layer 22 formed on the insulation layer 17 and electrically connected to the first element electrode portion 12b exposed in an opening portion 21, and an external electrode 23 formed, as a portion of the wiring layer 22, on the insulation layer 17.