发明名称 |
Production of a transistor arrangement comprises inserting a trench in a process layer of a semiconductor substrate, and forming a drift zone, a channel zone and a source zone in the process zone |
摘要 |
Production of a transistor arrangement comprises: (a) inserting a trench (6) in a process layer (2) of a semiconductor substrate (7; (b) providing a field electrode (63) and a gate electrode (62) separately from each other and electrically insulated by the process layer; and (c) forming a drift zone (21), a channel zone (22) and a source zone (23) in the process zone. Either the source zone or the channel zone is produced after the trench is formed in the semiconductor substrate. An Independent claim is also included for a trench transistor cell formed in a semiconductor substrate. Preferably after inserting the trench in the process layer, the trench is lined with a first dielectric layer and the field electrode is arranged on sections of the trench lined with the dielectric layer. After producing the field electrode, a gate dielectric layer is formed on sections of the trench wall and a second dielectric layer on the field electrode.
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申请公布号 |
DE10234996(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
DE20021034996 |
申请日期 |
2002.07.31 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HENNINGER, RALF;HIRLER, FRANZ;KRUMREY, JOACHIM;RIEGER, WALTER;POELZL, MARTIN;HOFER, HEIMO |
分类号 |
H01L21/336;H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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