Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device including a non-volatile memory device and a resistance element including a resistance conductive layer is provided. The method comprises the following steps: a step of pattering a stopper layer and a first conductive layer to form a gate layer; a step of patterning the stopper layer, a dielectric layer and the first conductive layer to form a resistance conductive layer; a step of forming sidewall-like control gates on both side surfaces of the gate layer through ONO films at least within a memory region; a step of forming a second conductive layer above the gate layer and the resistance conductive layer; a step of forming a word line by patterning the second conductive layer; and a step of forming a word gate by patterning the gate layer.