发明名称 |
Patterned SOI by formation and annihilation of buried oxide regions during processing |
摘要 |
A method of fabricating a silicon-on-insulator (SOI) substrate including an ultra-thin top Si-containing layer and at least one patterned buried semi-insulating or insulating region having well defined edges is provided. The method includes a step of implanting first ions into a surface of a Si-containing substrate so as to form a first implant region of the first ions in the Si-containing substrate. Following the implantation of first ions, a first annealing step is performed which forms a buried semi-insulating or insulating region within the Si-containing substrate. Next, second ions that are insoluble in the semi-insulating or insulating region are selectively implanted into portions of the buried semi-insulating or insulating region. After the selective implant step, a second annealing step is performed which recrystallizes the buried semi-insulating or insulating region that includes second ions to the same crystal structure as the original Si-containing substrate.
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申请公布号 |
US2003194847(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20020119931 |
申请日期 |
2002.04.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN TZE-CHIANG;SADANA DEVENDRA K. |
分类号 |
H01L21/762;(IPC1-7):H01L21/76;H01L21/30;H01L21/425;H01L21/46 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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