发明名称 |
Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding |
摘要 |
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
|
申请公布号 |
US2003192943(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20020120836 |
申请日期 |
2002.04.11 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
SUDIJONO JOHN LEONARD;ALIYU YAKUB;ZHOU MEI SHENG;CHOOI SIMON;GUPTA SUBHASH;ROY SUDIPTO RANENDRA;HO PAUL KWOK KEUNG;XU YI |
分类号 |
C23G5/00;H01L21/306;H01L21/3213;H01L21/607;H01L23/485;(IPC1-7):B23K31/00;B23K31/02;H01L21/44 |
主分类号 |
C23G5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|