发明名称 Deposition methods utilizing microwave excitation, and deposition apparatuses
摘要 The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.
申请公布号 US2003194508(A1) 申请公布日期 2003.10.16
申请号 US20020121320 申请日期 2002.04.11
申请人 发明人 CARPENTER CRAIG M.;DANDO ROSS S.;CAMPBELL PHILIP H.
分类号 C23C16/44;C23C16/455;C23C16/511;C30B25/10;H01J37/32;H01L21/205;H01Q21/00;(IPC1-7):C23C16/00;H05H1/24 主分类号 C23C16/44
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