发明名称 |
Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber |
摘要 |
A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.
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申请公布号 |
US2003192475(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20020124191 |
申请日期 |
2002.04.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHANNON STEVEN C.;HOFFMAN DANIEL J.;BARNES MICHAEL;LABLANC LEE |
分类号 |
H01J37/32;(IPC1-7):G06F17/50;C23C16/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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