SEED CRYSTAL OF SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING INGOT USING SAME

摘要

A seed crystal of a silicon carbide single crystal preferably used to produce a substrate (wafer) for a power device or a high-frequency device, a method for producing an ingot using the same are disclosed. The single crystal growing face of a seed crystal of a silicon carbide single crystal is inclined at an angle of 3 to 60 degrees with respect to the (11-20) face toward the direction at an angle of -45 to 45 degrees inclined from the <0001> direction to the [1-100] direction. By growing a crystal using such a seed crystal, high-quality silicon carbide single ingot is produced. According to the invention, a material of a favorable-quality SiC single crystal having a diameter suitable to practical application and hardly including crystal defects such as micropipe defects and stacking faults can be produced with favorable reproducibility.