| 摘要 |
An MRAM array includes a plurality of memory cells arranged in rows and columns are programmed, each memory cell in a respective row being coupled to a corresponding word line and each memory cell in respective column being coupled to a corresponding bit line. According to one aspect of the present invention, a method for writing data to selected memory cells includes applying a row current to a selected word line and applying a first column current to a selected bit line. The column current is applied in a first direction. Second column currents are applied to at least the unselected bit lines adjacent the selected bit line. The second column currents are applied in a second direction that is opposite the first direction.
|
