发明名称 SURFACE SILANIZATION
摘要 <p>A substrate (104) surface is plasma cleaned using gas from inlet (110) regulated by controller (130) and silanized via system (100) in a chamber (102). Plasma is generated vice electrodes (106) and power supply (108) in the chamber to clean the substrate surface. Gas from inlet (114) and valve (120) containing an organosilane compound from vessel (116) for solution (118) is introduced into the same chamber to silanized the cleaned surface. Water (124) from vessel (122) and valve (126) is deposited on the substrate surface to facilitate silane coupling reaction. A layer of covalently bonded silane molecules having functional groups, is thus produced on the substrate surface. The substrate is then cured by a baking process in an oven (128). Vacuum pump 112 with valve (132) removes gases and contaminates from the chamber.</p>
申请公布号 WO2003085161(P1) 申请公布日期 2003.10.16
申请号 US2003007079 申请日期 2003.03.10
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