CHEMICALLY AND ELECTRICALLY STABILIZED POLYMER FILMS BACKGROUND

摘要

Preparation methods and stabilization processes for low K polymers that consist of sp<2>C-X and HC-sp<2>Cα-X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from -20°C to -50°C to +20°C to +50°C of their Reversible Crystal Transformation ("CRT") temperatures, then quenching the resulting films to -20°C to -50°C below their "CRT" temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. "Restabilization" processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.