发明名称 METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS
摘要 A method to improve nucleation and / or adhesion of a CVD or ALD-deposited film / layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.
申请公布号 WO03029514(A3) 申请公布日期 2003.10.16
申请号 WO2002US30792 申请日期 2002.09.26
申请人 INTEL CORPORATION 发明人 LEU, JIHPERNG;WU, CHIH-I;ZHOU, YING;KLOSTER, GRANT, M.
分类号 C23C16/02;H01L21/3205;H01L21/768 主分类号 C23C16/02
代理机构 代理人
主权项
地址