发明名称 |
METHOD OF DEPOSITING CVD AND ALD FILMS ONTO LOW-DIELECTRIC-CONSTANT DIELECTRICS |
摘要 |
A method to improve nucleation and / or adhesion of a CVD or ALD-deposited film / layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer. |
申请公布号 |
WO03029514(A3) |
申请公布日期 |
2003.10.16 |
申请号 |
WO2002US30792 |
申请日期 |
2002.09.26 |
申请人 |
INTEL CORPORATION |
发明人 |
LEU, JIHPERNG;WU, CHIH-I;ZHOU, YING;KLOSTER, GRANT, M. |
分类号 |
C23C16/02;H01L21/3205;H01L21/768 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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