发明名称 |
Method for the formation of diffusion barrier |
摘要 |
Electronic components such as semiconductor wafer VLSI and ULSI integrated circuit devices are provided having a robust barrier layer in the device interconnects. The robust barrier layer provides excellent step coverage, low resistance and enhanced adhesion to CVD copper and the interconnect has a double structure of a layer of a barrier material and a metal layer thereon. The metal layer is preferably tungsten and is formed by replacing silicon or other such atoms on the surface of the barrier layer with tungsten metal. A layer of silicon can be formed on the barrier layer, silicon atoms can be formed on the surface by reacting the barrier layer with a silicon containing reactant or a silicon containing barrier layer can be used.
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申请公布号 |
US2003194858(A1) |
申请公布日期 |
2003.10.16 |
申请号 |
US20030425306 |
申请日期 |
2003.04.29 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
LEE SANG-HYOEB;RAMANATHAN SASANGAN |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/476;H01L21/44;H01L23/48;H01L29/40 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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