| 摘要 |
Device for etching a semiconductor body comprises a substrate electrode (40, 41) arranged in an etching chamber (10); and units for etching the semiconductor body received by the electrode. The substrate electrode has contact units and is in contact with electrical components in which, during etching, a zone (32) with an inhomogeneous charge carrier density and/or inhomogeneous charge carrier polarity in the semiconductor body is subjected to an electrical voltage and the electric current induced in the zone by the electrical voltage is measured. Preferred Features: A change, especially a rise in the electrical current, is detected on reaching the zone (32) structured as a pn-junction. The substrate electrode has contact springs or contact pins for contacting with on one side an n-doped region (31) and on the other side a p-doped region (30) of the semiconductor body. A process gas, especially ClF3, is introduced into the etching chamber from a pressure vessel (22).
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