发明名称 Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle
摘要 Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination. <IMAGE>
申请公布号 DE69911118(D1) 申请公布日期 2003.10.16
申请号 DE1999611118 申请日期 1999.06.17
申请人 CANON K.K., TOKIO/TOKYO 发明人 MIZUTANI, MASAKI;TANIKAWA, ISAO;NAKAGAWA, KATSUMI;SHOJI, TATSUMI;UKIYO, NORITAKA;IWASAKI, YUKIKO
分类号 H01L31/04;C23C16/01;C30B33/00;H01L21/762;H01L31/18 主分类号 H01L31/04
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