Method of stress and damage elimination during formation of isolation device

摘要

The present invention provides a method of stress and damage elimination during formation of a trench isolation device. The method provides a semiconductor substrate and then the semiconductor substrate is etched to form a trench structure. The trench structure is subjected to annealing, such as high temperature or rapid thermal annealing, whereby eliminates stress of the trench structure. It is also applied on forming a side-wall oxide layer at a side-wall of the trench structure and then subjecting the side-wall oxide layer to annealing whereby eliminates oxidation-induced stress of the trench structure.