摘要 |
A method of forming a thin film transistor and its associated driver. A polysilicon layer, a gate oxide layer and a gate layer are formed on a substrate. A photoresist layer comprising of a top section and a base section is formed over the gate layer. The top section of the photoresist layer patterns out a thin film transistor gate while the base section outside the top section patterns out a lightly doped region or undoped region on each side of the gate. Complementary metal-oxide-semiconductor drivers are formed on each side of the thin film transistor.
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