发明名称 Process for fabricating a semiconductor
摘要 <p>A process or improving the yield of semiconductors, such as high electron mobility transistors (HEMTs), which are susceptible to damage during conventional metal lift-off techniques. In accordance with an important aspect of the invention, damage to relatively fragile structures, such as submicron dimensioned structures on semiconductors are minimized by utilizing an adhesive tape to peel off undesired metal in close proximity to submicron dimension structures. By using an adhesive tape to peel off undesired metal, damage to submicron dimension structures is minimized thus improving the yield.</p>
申请公布号 EP1353362(A2) 申请公布日期 2003.10.15
申请号 EP20030007967 申请日期 2003.04.09
申请人 NORTHROP GRUMMAN CORPORATION 发明人 GRUNDBACHER, RONALD W.;LIU, PO-HSIN;DIA, ROSALINDA M.
分类号 H01L21/331;H01L21/027;H01L21/28;H01L21/3205;H01L21/335;(IPC1-7):H01L21/027;H01L21/321 主分类号 H01L21/331
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