发明名称 PHASE SHIFT MASK AND PATTERN FORMING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask capable of reducing the deviation of a phase difference from 180°when being used combinedly with an oblique incidence illumination. <P>SOLUTION: Exposure light transmitting a shifter 23 travels on paths A1 to A4, and exposure light transmitting only a transparent substrate 22 travels on paths A11 to A14. The film thickness of the shifter 23 is defined as d2, an incidence angle when the exposure light is made incident on the transparent substrate 22 from an ambient atmosphere 21 asθ0, an angle of refraction at a boundary asθ1, and an angle of refraction at a boundary when the exposure light is made incident on the shifter from the transparent substrate 22 asθ2. The film thickness d2 of the shifter 23 is defined as follows: d2=λ/2/(n2×cosθ2-n0×cosθ0) such that the phase difference between the exposure light transmitting the shifter 23 to A1 to A4 and the exposure light transmitting only the transparent substrate 22 to A11 to A14 is 180°. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003295412(A) 申请公布日期 2003.10.15
申请号 JP20020102360 申请日期 2002.04.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IWAMOTO FUMIO;KOIZUMI TAICHI
分类号 G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
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