| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing cost and to narrow the periphery of a picture frame with respect to a display such as a thin film diode type display, a passive type display, a digital mirror type display, or the like, and a semiconductor device such as a charge coupled device type sensor, a thin film transistor type sensor, or the like. SOLUTION: The driving circuit of a thin film diode type display is formed by separating a circuit chip 37 formed on a substrate for forming an element being not illustrated and transcribing it to a substrate 12a in which thin film diodes are formed in an array state. The thin film transistor included in the circuit chip 37 is a low temperature multi-crystal silicon thin film transistor. The circuit chip 37 is separated from the substrate for forming an element by irradiating with a laser beam. COPYRIGHT: (C)2004,JPO
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