| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin enabling the production of a photoresist excellent in transparency and dry etching property toward a radiation especially to such as a Kr excimer laser, as a chemically amplifying type resist and further having excellent characteristics such as resolution, sensitivity, heat resistance, wide focus margin, wide exposure margin to light, etc. <P>SOLUTION: This resin for the photoresist is obtained by protecting at least a part of hydroxy group of a novolak phenolic resin obtained by the reaction of phenols with an aldehyde in the presence of an acid catalyst, with a group eliminable by an action of an acid. The phenols are characterized by containing meta-cresol and a phenol expressed by a specific structural formula as indispensable components. <P>COPYRIGHT: (C)2004,JPO |
